Resistive Switching Characteristics of Sol-Gel Zinc Oxide Films for Flexible Memory Applications

Unipolar resistive switching devices are investigated for nonvolatile memory applications in a metal-insulator-metal structure in which the insulator layer is based on sol-gel-derived zinc oxide (ZnO) films prepared by a simple spin-coating process followed by thermal annealing. Fast programming ( l...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2009-04, Vol.56 (4), p.696-699
Main Authors: Sungho Kim, Hanul Moon, Gupta, D., Seunghyup Yoo, Yang-Kyu Choi
Format: Article
Language:English
Subjects:
Annealing
Applied sciences
Circuit properties
Crystallinity
Data mining
Data storage
Design. Technologies. Operation analysis. Testing
Devices
Electric, optical and optoelectronic circuits
Electrical engineering
Electronic circuits
Electronics
Exact sciences and technology
Flexible
Insulators
Integrated circuits
Integrated circuits by function (including memories and processors)
Magnetic and optical mass memories
Memory devices
Resistance
resistance random access memory (RRAM)
resistive switching
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
sol-gel
Storage and reproduction of information
Substrates
Switches
Switching
Switching, multiplexing, switched capacity circuits
Zinc oxide
zinc oxide (ZnO)
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Description
Summary:Unipolar resistive switching devices are investigated for nonvolatile memory applications in a metal-insulator-metal structure in which the insulator layer is based on sol-gel-derived zinc oxide (ZnO) films prepared by a simple spin-coating process followed by thermal annealing. Fast programming ( les 50 ns) and a high off-to-on resistance ratio ( ges 10 4 ) is demonstrated. The influences on the switching behaviors according to the crystallinity of the ZnO films are studied as a function of the annealing temperature. In addition, the devices are fabricated on a flexible plastic substrate and exhibit excellent durability upon repeated bending tests, demonstrating their potential for flexible low-cost memory devices.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2009.2012522