Effects of Multigate-Feeding Structure on the Gate Resistance and RF Characteristics of 0.1-μm Metamorphic High Electron-Mobility Transistors

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2009-06, Vol.57 (6), p.1487-1493
Main Authors: OH, Jung-Hun, MIN HAN, LEE, Sang-Jin, JUN, Byoung-Chul, MOON, Sung-Woon, LEE, Jae-Seo, RHEE, Jin-Koo, KIM, Sam-Dong
Format: Article
Language:English
Subjects:
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online Access:Get full text
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ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2009.2020671