Band offsets at interfaces of (1 00)lnxGa1-xAs (0 ≤ x ≤ 0.53) with Al2O3 and HfO2

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Bibliographic Details
Main Authors: AFANAS'EV, V. V, STESMANS, A, NEWCOMB, S. B, BRAMMERTZ, G, DELABIE, A, SIONKE, S, O'MAHONY, A, POVEY, I. M, PEMBLE, M. E, O'CONNO, E, HURLEY, P. K
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online Access:Get full text
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ISSN:0167-9317
1873-5568