Flow modulation effect on N incorporation into GaAs(1-x)Nx films during chemical beam epitaxy growth

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Bibliographic Details
Published in:Journal of crystal growth 2009-05, Vol.311 (10), p.2821-2824
Main Authors: SUZUKI, H, NISHIMURA, K, SAITO, K, OHSHITA, Y, KOJIMA, N, YAMAGUCHI, M
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Energy
Exact sciences and technology
Materials science
Methods of crystal growth
physics of crystal growth
Natural energy
Other semiconductors
Photovoltaic conversion
Physics
Solar cells. Photoelectrochemical cells
Solar energy
Solid surfaces and solid-solid interfaces
Specific materials
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
Online Access:Get full text
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ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2009.01.020