Influence of a p-InGaN/GaN short-period superlattice on the performance of GaN-based light-emitting diodes

• Published in: Semiconductor science and technology 2009-08, Vol.24 (8), p.085016-085016 (5)
• Main Authors: Li, Shuti, Wu, Qibao, Fan, Guanghan, Zhou, Tianming, Zhang, Yong, Yian, Yin, He, Miao, Cao, Jianxing, Su, Jun
• Format: Article
• Language: English
• Subjects: Applied sciences; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Circuit properties; Circuits of signal characteristics conditioning (including delay circuits); Compound structure devices; Cross-disciplinary physics: materials science; rheology; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optoelectronic devices; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
• ISSN: 0268-1242; 1361-6641
• DOI: 10.1088/0268-1242/24/8/085016

We have investigated the performance of GaN-based blue light-emitting diodes (LEDs) with a p-InGaN/GaN short-period superlattice (SPS) contact layer, which were grown by metal organic chemical vapor deposition. It was found that dot-like features appeared on the surface when a p-InGaN/GaN SPS structure was grown. The LED operating voltage decreased from 3.52 V to 3.15 V and the electrostatic discharge properties of LEDs were improved by using such a SPS structure. The output powers of LEDs were also increased by adjusting the In mole fraction in the SPS. However, the lifetime of LEDs became shorter when such a SPS structure was used.