Explicit Compact Model for Ultranarrow Body FinFETs

An explicit charge-based compact model for lightly doped FinFETs is proposed. This design-oriented model is valid and continuous in all operating regimes (subthreshold, linear, and saturation) for channel lengths ( L ) down to 25 nm, Fin widths ( W Si ) down to 3 nm, and Fin heights ( H Si ) down to...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2009-07, Vol.56 (7), p.1543-1547
Main Authors: Mingchun Tang, Pregaldiny, F., Lallement, C., Sallese, J.-M.
Format: Article
Language:English
Subjects:
Applied sciences
Channels
Compact modeling
Computational modeling
Drains
Electric potential
Electronics
Exact sciences and technology
explicit model
FinFET
FinFETs
Integrated circuit modeling
Modulation
MOSFET circuits
quantum effects
Quantum mechanics
Saturation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
short-channel effects (SCEs)
Silicon
Solid modeling
Threshold voltage
Transistors
Voltage
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Summary:An explicit charge-based compact model for lightly doped FinFETs is proposed. This design-oriented model is valid and continuous in all operating regimes (subthreshold, linear, and saturation) for channel lengths ( L ) down to 25 nm, Fin widths ( W Si ) down to 3 nm, and Fin heights ( H Si ) down to 50 nm with a single set of parameters. It takes short-channel effects, subthreshold slope degradation, drain-induced barrier lowering, drain saturation voltage with velocity saturation, channel length modulation, and quantum mechanical effects into account.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2009.2020324