Switching from negative to positive nonlinear absorption in p type 0.5 at% Sn doped GaSe semiconductor crystal

The nonlinear absorption properties of p type 0.5 at% Sn doped GaSe crystal have been studied by using open-aperture Z-scan technique under 1064 nm wavelength and 4 ns or 65 ps pulse duration. A switching from negative nonlinear absorption (saturated absorption) to positive nonlinear absorption (two...

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Bibliographic Details
Published in:Optical materials 2009, Vol.31 (11), p.1663-1666
Main Authors: Yüksek, M., Elmali, A., Karabulut, M., Mamedov, G.M.
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Nonlinear optics
Optical susceptibility, hyperpolarizability
Optics
Physics
Saturable absorption
Sn doped GaSe crystal
Two photon absorption
Z-scan
Online Access:Get full text
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Summary:The nonlinear absorption properties of p type 0.5 at% Sn doped GaSe crystal have been studied by using open-aperture Z-scan technique under 1064 nm wavelength and 4 ns or 65 ps pulse duration. A switching from negative nonlinear absorption (saturated absorption) to positive nonlinear absorption (two photon absorption) has been observed as the input laser irradiance increases from 0.049 GW/cm 2 to 0.106 GW/cm 2. The nonlinear absorption coefficient increases monotonically with the increase of pulse duration from 65 ps to 4 ns.
ISSN:0925-3467
1873-1252
DOI:10.1016/j.optmat.2009.04.003