Improvement of the Sensing Window on a Capacitorless 1T-DRAM of a FinFET-Based Unified RAM

A novel initialization concept is demonstrated to improve the program efficiency of the 1T-DRAM mode of unified random access memory (URAM). The proposed method involves boosting the gate-induced drain leakage current for the generation of excess holes by pretrapping electrons to the nitride layer p...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2009-12, Vol.56 (12), p.3228-3231
Main Authors: CHOI, Sung-Jin, HAN, Jin-Woo, KIM, Chung-Jin, KIM, Sungho, CHOI, Yang-Kyu
Format: Article
Language:English
Subjects:
1T-DRAM
Activation
Applied sciences
Capacitorless DRAM
Compound structure devices
Cycles
Design. Technologies. Operation analysis. Testing
Detection
Drains
DRAM chips
Electron traps
Electronics
embedded memory
Exact sciences and technology
gate-induced drain leakage (GIDL)
GIDL program
Integrated circuits
Integrated circuits by function (including memories and processors)
Leakage current
Logic gates
Nitrides
Random access memory
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Sensors
soft erasing
SONOS
SONOS devices
Stress measurement
Transistors
unified random access memory (URAM)
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Summary:A novel initialization concept is demonstrated to improve the program efficiency of the 1T-DRAM mode of unified random access memory (URAM). The proposed method involves boosting the gate-induced drain leakage current for the generation of excess holes by pretrapping electrons to the nitride layer prior to the activation of 1T-DRAM mode. The proposed initialization concept doubles the current sensing window in 1T-DRAM operation. Due to the potential for soft erasing caused by hot-hole injections into electrons that are trapped in the nitride during the P/E cycling of 1T-DRAM, immunity against soft erasing is confirmed through a dc stress measurement as well.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2009.2033011