A Computational Study of Dopant-Segregated Schottky Barrier MOSFETs

A dopant-segregated Schottky barrier MOSFET is simulated by Monte Carlo method in this paper. The feature that dopant-segregated structure can improve on-current is revealed. The influence of dopant-segregated structure parameters on device performance is investigated, and the guideline for device d...

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Bibliographic Details
Published in:IEEE transactions on nanotechnology 2010-01, Vol.9 (1), p.108-113
Main Authors: Zeng, Lang, Liu, Xiao Yan, Zhao, Yu Ning, He, Yu Hui, Du, Gang, Kang, Jin Feng, Han, Ru Qi
Format: Article
Language:English
Subjects:
Applied sciences
Barriers
Carrier transport
Computer simulation
Decision support systems
Design optimization
Devices
dopant-segregated structure
Drains
Electronics
Exact sciences and technology
Fabrication
Guidelines
Microelectronics
Monte Carlo method
MOSFETs
Saturation
Schottky barrier MOSFETs
Schottky barriers
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicides
Thermal resistance
Transistors
Voltage
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Summary:A dopant-segregated Schottky barrier MOSFET is simulated by Monte Carlo method in this paper. The feature that dopant-segregated structure can improve on-current is revealed. The influence of dopant-segregated structure parameters on device performance is investigated, and the guideline for device design optimization is that the dopant-segregated region should overlay the whole Schottky barrier region. Some carrier transport details are also demonstrated here. The maximal velocities at source and drain sides all decrease with the increase of dopant-segregated region length. The maximal velocity at source side shows saturation with the existence of dopant-segregated structure when drain voltage increases while the maximal velocity at drain side shows no saturation.
ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2009.2031230