Three-Dimensional Stackable Electromechanical Nonvolatile Memory Cell (H Cell) for Four-Bit Operation

A novel H-cell design has been proposed and successfully demonstrated. To the best of the author's knowledge, it is the first CMOS-compatible electromechanical nonvolatile memory that shows the feasibility of 4-bit operation experimentally. The fabricated prototype H cell shows a reasonable per...

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Bibliographic Details
Published in:IEEE electron device letters 2010-01, Vol.31 (1), p.29-31
Main Author: Choi, W Y
Format: Article
Language:English
Subjects:
Applied sciences
Design optimization
Design. Technologies. Operation analysis. Testing
Dielectrics
Educational technology
Electromechanical memory
Electronics
Exact sciences and technology
Flash memory
Flash memory cells
H cell
Inorganic materials
Integrated circuits
Integrated circuits by function (including memories and processors)
Magnetic and optical mass memories
multibit operation
Nonvolatile memory
Prototypes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Storage and reproduction of information
Structural beams
Voltage
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Description
Summary:A novel H-cell design has been proposed and successfully demonstrated. To the best of the author's knowledge, it is the first CMOS-compatible electromechanical nonvolatile memory that shows the feasibility of 4-bit operation experimentally. The fabricated prototype H cell shows a reasonable performance, except for the endurance property that will be overcome by reducing the cell size and introducing a new beam material. The H cell can be used for high-density and low-power 3-D stackable electromechanical nonvolatile memory.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2009.2035342