Electrostatic Reliability Characteristics of GaN Flip-Chip Power Light-Emitting Diodes With Metal-Oxide-Silicon Submount : Light-emitting diodes

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Bibliographic Details
Published in:IEEE transactions on electron devices 2010, Vol.57 (1), p.119-124
Main Authors: CHANG, Liann-Be, CHIANG, Kuo-Ling, CHANG, Hsin-Yi, JENG, Ming-Jer, YEN, Chia-Yi, LIN, Cheng-Chen, CHANG, Yuan-Hsiao, LAI, Mu-Jen, LEE, Yu-Lin, SOONG, Tai-Wei
Format: Article
Language:English
Subjects:
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Integrated circuits
Optoelectronic devices
Other multijunction devices. Power transistors. Thyristors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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ISSN:0018-9383
1557-9646