Effect of annealing on the structural and optical properties of heavily carbon-doped ZnO

ZnO films grown by metalorganic vapor phase epitaxy (MOVPE) at low temperatures (~500 degree C) exhibit very high levels of carbon incorporation in the range of up to several percent. Such large levels of carbon incorporation significantly affect the structural properties of the thin films resulting...

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Bibliographic Details
Published in:Semiconductor science and technology 2010-04, Vol.25 (4), p.045023-045023
Main Authors: Huang, He, Deng, Z W, Li, D C, Barbir, E, Jiang, W Y, Chen, M X, Kavanagh, K L, Mooney, P M, Watkins, S P
Format: Article
Language:English
Subjects:
Alignment
Annealing
Carbon
Clusters
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Crystals
Exact sciences and technology
Ii-vi semiconductors
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
Pole figures
Semiconductors
Sharpening
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Zinc oxide
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Summary:ZnO films grown by metalorganic vapor phase epitaxy (MOVPE) at low temperatures (~500 degree C) exhibit very high levels of carbon incorporation in the range of up to several percent. Such large levels of carbon incorporation significantly affect the structural properties of the thin films resulting in broadening of symmetric (0 0 2) rocking curves as well as broadened (1 0 1) pole figures compared with films grown at high temperature. Annealing of the films under air ambient at temperatures between 800 and 1100 degree C results in dramatic sharpening of symmetric (0 0 2) rocking curves, indicating improved crystal alignment along the c-axes. (1 0 1) pole figure scans also show significant sharpening in the azimuthal axis, indicating similar improvements in the in-plane crystal alignment perpendicular to the c-axis. Raman spectra for as-grown ZnO at 500 degree C show strong D and G peaks at 1381 and 1578 cm-1 due to sp2 carbon clusters. Annealing at 1000 degree C results in the elimination of these bands, indicating that post-growth annealing treatment is a useful method to reduce the concentration of sp2 carbon clusters.
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/25/4/045023