A simple technique to increase the switching speed of the MOS transistor

This paper describes a new method to improve the switching speed of MOS transistors by the decrease of the turn-off time. The bulk of the transistor is used as the second command gate. A simple analog MOS switch at which the gate and bulk voltages have the same time dependence is proposed. The circu...

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Bibliographic Details
Main Authors: Brezeanu, G., Mitu, M., Dilimot, G., Enache, I.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Capacitance
Circuit simulation
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Low voltage
MOSFETs
Power semiconductor switches
Power system modeling
Schottky diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SPICE
Switching circuits
Threshold voltage
Transistors
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Summary:This paper describes a new method to improve the switching speed of MOS transistors by the decrease of the turn-off time. The bulk of the transistor is used as the second command gate. A simple analog MOS switch at which the gate and bulk voltages have the same time dependence is proposed. The circuit realizes an increase of the switching speed up to 50% for n-MOS transistor and around 20% for p-MOS. Also, SPICE circuit simulations and a first order modelling show superior performance of this technique over conventional switch.
DOI:10.1109/ICMEL.1997.632951