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A simple technique to increase the switching speed of the MOS transistor

This paper describes a new method to improve the switching speed of MOS transistors by the decrease of the turn-off time. The bulk of the transistor is used as the second command gate. A simple analog MOS switch at which the gate and bulk voltages have the same time dependence is proposed. The circu...

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Main Authors:	Brezeanu, G., Mitu, M., Dilimot, G., Enache, I.
Format:	Conference Proceeding
Language:	English
Subjects:	Applied sciences Capacitance Circuit simulation Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Low voltage MOSFETs Power semiconductor switches Power system modeling Schottky diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SPICE Switching circuits Threshold voltage Transistors
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creator	Brezeanu, G. Mitu, M. Dilimot, G. Enache, I.
description	This paper describes a new method to improve the switching speed of MOS transistors by the decrease of the turn-off time. The bulk of the transistor is used as the second command gate. A simple analog MOS switch at which the gate and bulk voltages have the same time dependence is proposed. The circuit realizes an increase of the switching speed up to 50% for n-MOS transistor and around 20% for p-MOS. Also, SPICE circuit simulations and a first order modelling show superior performance of this technique over conventional switch.
doi_str_mv	10.1109/ICMEL.1997.632951
format	conference_proceeding
fullrecord	<record><control><sourceid>pascalfrancis_6IE</sourceid><recordid>TN_cdi_pascalfrancis_primary_2279530</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>632951</ieee_id><sourcerecordid>2279530</sourcerecordid><originalsourceid>FETCH-LOGICAL-i133t-f091c8856a17ddf086533418b0c980587b2cd3859c18bd4a1141fd0fa36e87de3</originalsourceid><addsrcrecordid>eNo9kE9LxDAQxQMiqOt-AD3l4LU16SRNclzK6i502YMK3pZs_thIt61NRfz2BivOZX689xiGh9ANJTmlRN1vq926zqlSIi-hUJyeoSsiJAEoS_Z6gZYxvpM0jHFG5CXarHAMp6F1eHKm6cLHZ6Ieh86MTsfEjcPxK0ymCd0bjoNzFvf-V97tn_A06i6GOPXjNTr3uo1u-bcX6OVh_Vxtsnr_uK1WdRYowJR5oqiRkpeaCms9kSUHYFQeiVGScCmOhbEguTJJs0xTyqi3xGsonRTWwQLdzXcHHY1ufXrAhHgYxnDS4_ehKITiQFLsdo4F59y_O1cCP3I5VmI</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>A simple technique to increase the switching speed of the MOS transistor</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Brezeanu, G. ; Mitu, M. ; Dilimot, G. ; Enache, I.</creator><creatorcontrib>Brezeanu, G. ; Mitu, M. ; Dilimot, G. ; Enache, I.</creatorcontrib><description>This paper describes a new method to improve the switching speed of MOS transistors by the decrease of the turn-off time. The bulk of the transistor is used as the second command gate. A simple analog MOS switch at which the gate and bulk voltages have the same time dependence is proposed. The circuit realizes an increase of the switching speed up to 50% for n-MOS transistor and around 20% for p-MOS. Also, SPICE circuit simulations and a first order modelling show superior performance of this technique over conventional switch.</description><identifier>ISBN: 078033664X</identifier><identifier>ISBN: 9780780336643</identifier><identifier>DOI: 10.1109/ICMEL.1997.632951</identifier><language>eng</language><publisher>New York NY: IEEE</publisher><subject>Applied sciences ; Capacitance ; Circuit simulation ; Design. Technologies. Operation analysis. Testing ; Electronics ; Exact sciences and technology ; Integrated circuits ; Low voltage ; MOSFETs ; Power semiconductor switches ; Power system modeling ; Schottky diodes ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; SPICE ; Switching circuits ; Threshold voltage ; Transistors</subject><ispartof>1997 21st International Conference on Microelectronics. Proceedings, 1997, Vol.2, p.743-746 vol.2</ispartof><rights>1998 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/632951$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,4048,4049,27924,54919</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/632951$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=2279530$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Brezeanu, G.</creatorcontrib><creatorcontrib>Mitu, M.</creatorcontrib><creatorcontrib>Dilimot, G.</creatorcontrib><creatorcontrib>Enache, I.</creatorcontrib><title>A simple technique to increase the switching speed of the MOS transistor</title><title>1997 21st International Conference on Microelectronics. Proceedings</title><addtitle>ICMEL</addtitle><description>This paper describes a new method to improve the switching speed of MOS transistors by the decrease of the turn-off time. The bulk of the transistor is used as the second command gate. A simple analog MOS switch at which the gate and bulk voltages have the same time dependence is proposed. The circuit realizes an increase of the switching speed up to 50% for n-MOS transistor and around 20% for p-MOS. Also, SPICE circuit simulations and a first order modelling show superior performance of this technique over conventional switch.</description><subject>Applied sciences</subject><subject>Capacitance</subject><subject>Circuit simulation</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated circuits</subject><subject>Low voltage</subject><subject>MOSFETs</subject><subject>Power semiconductor switches</subject><subject>Power system modeling</subject><subject>Schottky diodes</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>SPICE</subject><subject>Switching circuits</subject><subject>Threshold voltage</subject><subject>Transistors</subject><isbn>078033664X</isbn><isbn>9780780336643</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1997</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNo9kE9LxDAQxQMiqOt-AD3l4LU16SRNclzK6i502YMK3pZs_thIt61NRfz2BivOZX689xiGh9ANJTmlRN1vq926zqlSIi-hUJyeoSsiJAEoS_Z6gZYxvpM0jHFG5CXarHAMp6F1eHKm6cLHZ6Ieh86MTsfEjcPxK0ymCd0bjoNzFvf-V97tn_A06i6GOPXjNTr3uo1u-bcX6OVh_Vxtsnr_uK1WdRYowJR5oqiRkpeaCms9kSUHYFQeiVGScCmOhbEguTJJs0xTyqi3xGsonRTWwQLdzXcHHY1ufXrAhHgYxnDS4_ehKITiQFLsdo4F59y_O1cCP3I5VmI</recordid><startdate>1997</startdate><enddate>1997</enddate><creator>Brezeanu, G.</creator><creator>Mitu, M.</creator><creator>Dilimot, G.</creator><creator>Enache, I.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope><scope>IQODW</scope></search><sort><creationdate>1997</creationdate><title>A simple technique to increase the switching speed of the MOS transistor</title><author>Brezeanu, G. ; Mitu, M. ; Dilimot, G. ; Enache, I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i133t-f091c8856a17ddf086533418b0c980587b2cd3859c18bd4a1141fd0fa36e87de3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Applied sciences</topic><topic>Capacitance</topic><topic>Circuit simulation</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Integrated circuits</topic><topic>Low voltage</topic><topic>MOSFETs</topic><topic>Power semiconductor switches</topic><topic>Power system modeling</topic><topic>Schottky diodes</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>SPICE</topic><topic>Switching circuits</topic><topic>Threshold voltage</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>Brezeanu, G.</creatorcontrib><creatorcontrib>Mitu, M.</creatorcontrib><creatorcontrib>Dilimot, G.</creatorcontrib><creatorcontrib>Enache, I.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Brezeanu, G.</au><au>Mitu, M.</au><au>Dilimot, G.</au><au>Enache, I.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A simple technique to increase the switching speed of the MOS transistor</atitle><btitle>1997 21st International Conference on Microelectronics. Proceedings</btitle><stitle>ICMEL</stitle><date>1997</date><risdate>1997</risdate><volume>2</volume><spage>743</spage><epage>746 vol.2</epage><pages>743-746 vol.2</pages><isbn>078033664X</isbn><isbn>9780780336643</isbn><abstract>This paper describes a new method to improve the switching speed of MOS transistors by the decrease of the turn-off time. The bulk of the transistor is used as the second command gate. A simple analog MOS switch at which the gate and bulk voltages have the same time dependence is proposed. The circuit realizes an increase of the switching speed up to 50% for n-MOS transistor and around 20% for p-MOS. Also, SPICE circuit simulations and a first order modelling show superior performance of this technique over conventional switch.</abstract><cop>New York NY</cop><pub>IEEE</pub><doi>10.1109/ICMEL.1997.632951</doi><tpages>4</tpages></addata></record>
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ispartof	1997 21st International Conference on Microelectronics. Proceedings, 1997, Vol.2, p.743-746 vol.2
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source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Applied sciences Capacitance Circuit simulation Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Low voltage MOSFETs Power semiconductor switches Power system modeling Schottky diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SPICE Switching circuits Threshold voltage Transistors
title	A simple technique to increase the switching speed of the MOS transistor
url	http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T19%3A59%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=A%20simple%20technique%20to%20increase%20the%20switching%20speed%20of%20the%20MOS%20transistor&rft.btitle=1997%2021st%20International%20Conference%20on%20Microelectronics.%20Proceedings&rft.au=Brezeanu,%20G.&rft.date=1997&rft.volume=2&rft.spage=743&rft.epage=746%20vol.2&rft.pages=743-746%20vol.2&rft.isbn=078033664X&rft.isbn_list=9780780336643&rft_id=info:doi/10.1109/ICMEL.1997.632951&rft_dat=%3Cpascalfrancis_6IE%3E2279530%3C/pascalfrancis_6IE%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i133t-f091c8856a17ddf086533418b0c980587b2cd3859c18bd4a1141fd0fa36e87de3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=632951&rfr_iscdi=true