High-power broad-area InGaNAs/GaAs quantum-well lasers in the 1200 nm range: 2009 International Electron Devices and Materials Symposium (IEDMS)

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Bibliographic Details
Published in:Microelectronics and reliability 2010, Vol.50 (5), p.722-725
Main Authors: YANG, Hung-Pin D, SHIH, Chih-Tsung, YANG, Su-Mei, LEE, Tsin-Dong
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Microelectronic fabrication (materials and surfaces technology)
Optics
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor lasers
laser diodes
Online Access:Get full text
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ISSN:0026-2714
1872-941X