Photocurrent and excess microwave reflectivity at semiconductor|electrolyte junctions: I. Minority carrier profiles

The photocurrent density j Ph and the excess microwave reflectivity, Δ R M, at the semiconductor|electrolyte boundary are calculated using analytical expressions for the excess minority carrier profiles. The model incorporates diffusive terms in the space charge region, depending on the surface para...

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Bibliographic Details
Published in:Journal of electroanalytical chemistry (Lausanne, Switzerland) Switzerland), 1998-02, Vol.443 (1), p.9-31
Main Authors: Schlichthörl, G., Lewerenz, H.J.
Format: Article
Language:English
Subjects:
Chemistry
Electrochemistry
Exact sciences and technology
General and physical chemistry
Microwave reflectivity
Photocurrent
Photoelectrochemistry. Electrochemiluminescence
Semiconductor|electrolyte junctions
Online Access:Get full text
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Summary:The photocurrent density j Ph and the excess microwave reflectivity, Δ R M, at the semiconductor|electrolyte boundary are calculated using analytical expressions for the excess minority carrier profiles. The model incorporates diffusive terms in the space charge region, depending on the surface parameter values, K r (charge transfer velocity), and S r (surface recombination velocity), the influence of small electrical fields in the so-called neutral region and the back contact recombination velocity, S rb. Photocurrent–voltage and excess microwave reflectivity–voltage curves are calculated depending on K r and S r showing that it is possible to determine these surface kinetic parameters from simultaneous measurements of j Ph and Δ R M. It is shown that for cases in which the quantum yield is high, microwave measurements exhibit a higher-sensitivity to changes in experimental parameters.
ISSN:1572-6657
1873-2569
DOI:10.1016/S0022-0728(97)00289-1