Experimental verification of temperature coefficients of resistance for uniformly doped P-type resistors in SOI

• Published in: Journal of micromechanics and microengineering 2010-06, Vol.20 (6), p.064008-064008
• Main Authors: Olszacki, M, Maj, C, Al Bahri, M, Marrot, J-C, Boukabache, A, Pons, P, Napieralski, A
• Format: Article
• Language: English
• Subjects: Applied sciences; Devices; Doping; Electronics; Exact sciences and technology; Fluid dynamics; Fundamental areas of phenomenology (including applications); Instrumentation for fluid dynamics; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Mathematical models; Mechanical engineering. Machine design; Mechanical instruments, equipment and techniques; Microelectronic fabrication (materials and surfaces technology); Microengineering; Micromechanical devices and systems; Micromechanics; Physics; Precision engineering, watch making; Pressure sensors; Resistors; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon
• ISSN: 0960-1317; 1361-6439
• DOI: 10.1088/0960-1317/20/6/064008

Many today's microsystems like strain-gauge-based piezoresistive pressure sensors contain doped resistors. If one wants to predict correctly the temperature impact on the performance of such devices, the accurate data about the temperature coefficients of resistance (TCR) are essential. Although such data may be calculated using one of the existing mobility models, our experiments showed that we can observe the huge mismatch between the calculated and measured values. Thus, in order to investigate the TCR values, a set of the test structures that contained doped P-type resistors was fabricated. As the TCR value also depends on the doping profile shape, we decided to use the very thin, 340 nm thick SOI wafers in order to fabricate the quasi-uniformly doped silicon layers ranging from 2 X 1017 at cm-3 to 1.6 X 1019 at cm-3. The results showed that the experimental data for the first-order TCR are quite far from the calculated ones especially over the doping range of 1018--1019 at cm-3 and quite close to the experimental ones obtained by Bullis about 50 years ago for bulk silicon. Moreover, for the first time, second-order coefficients that were not very consistent with the calculations were obtained.