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Effect of Post-Deposition Processing on ZnO Thin Films and Devices: Group III Nitrides, Silicon Carbide, and Zinc Oxide
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| Published in: | Journal of electronic materials 2010, Vol.39 (5), p.568-572 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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| container_end_page | 572 |
| container_issue | 5 |
| container_start_page | 568 |
| container_title | Journal of electronic materials |
| container_volume | 39 |
| creator | TINGFANG YEN HAUNGS, Alan SUNG JIN CARTWRIGHT, Alexander ANDERSON, Wayne A |
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| format | article |
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| fulltext | fulltext |
| identifier | ISSN: 0361-5235 |
| ispartof | Journal of electronic materials, 2010, Vol.39 (5), p.568-572 |
| issn | 0361-5235 1543-186X |
| language | eng |
| recordid | cdi_pascalfrancis_primary_22944381 |
| source | Springer Nature |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Defects and impurities in crystals microstructure Deposition by sputtering Doping and impurity implantation in other materials Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects) Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Structure of solids and liquids crystallography |
| title | Effect of Post-Deposition Processing on ZnO Thin Films and Devices: Group III Nitrides, Silicon Carbide, and Zinc Oxide |
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