Nitrogen and argon doped zinc oxide

In this work argon and nitrogen were implanted into ZnO single crystals in order to compare the influence of these non-magnetic elements in the magnetic and electrical behaviour of zinc oxide. The results indicate that both nitrogen and argon implantations induce magnetic defects in ZnO, although th...

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Bibliographic Details
Published in:Journal of physics. Condensed matter 2010-09, Vol.22 (34), p.346005-346005
Main Authors: Silva, C, Costa, A R G, Cruz, M M, da Silva, R C, Borges, R P, Alves, L C, Godinho, M
Format: Article
Language:English
Subjects:
Annealing
Argon
Condensed matter
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Conductivity phenomena in semiconductors and insulators
Crystal defects
Crystals
Defects and impurities in crystals
microstructure
Domain effects, magnetization curves, and hysteresis
Doping and impurity implantation in iii-v and ii-vi semiconductors
Electronic transport in condensed matter
Exact sciences and technology
Implantation
Low-field transport and mobility
piezoresistance
Magnetic properties and materials
Magnetization curves, magnetization reversal, hysteresis, barkhausen and related effects
Physics
Single crystals
Structure of solids and liquids
crystallography
Zinc oxide
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Summary:In this work argon and nitrogen were implanted into ZnO single crystals in order to compare the influence of these non-magnetic elements in the magnetic and electrical behaviour of zinc oxide. The results indicate that both nitrogen and argon implantations induce magnetic defects in ZnO, although these do not remain stable upon annealing. The comparison between the electrical behaviour of argon and nitrogen implanted crystals indicates that mobile charge carriers exist in the argon implanted sample after annealing, but were not detected in the nitrogen implanted sample.
ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/22/34/346005