Intrinsic doping and gate hysteresis in graphene field effect devices fabricated on SiO2 substrates: Carbon and related nanomaterials: a festschrift in memory of Peter Clay Eklund

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Bibliographic Details
Published in:Journal of physics. Condensed matter 2010, Vol.22 (33)
Main Authors: JOSHI, P, ROMERO, H. E, NEAL, A. T, TOUTAM, V. K, TADIGADAPA, S. A
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Molecular electronics, nanoelectronics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0953-8984
1361-648X