A 0.13 μm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps : The 23rd bipolar/BICMOS circuits and technology meeting

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2010, Vol.45 (9), p.1678-1686
Main Authors: RÜCKER, Holger, HEINEMANN, Bernd, KNOLL, Dieter, KORNDÖRFER, Falk, MAI, Andreas, MARSCHMEYER, Steffen, SCHLEY, P, SCHMIDT, D, SCHMIDT, J, ANDREAS SCHUBERT, Markus, SCHULZ, K, TILLACK, Bernd, WINKLER, Wolfgang, WOLANSKY, D, YAMAMOTO, Yuji, BARTH, R, BORNGRÄBER, J, DREWS, J, FISCHER, Gerhard G, FOX, Alexander, GRABOLLA, Thomas, HAAK, U
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Design. Technologies. Operation analysis. Testing
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Integrated circuits
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Oscillators, resonators, synthetizers
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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ISSN:0018-9200
1558-173X