Analysis of Leakage Current Mechanisms in BiFeO3 Thin Films

Phonon-assisted tunneling (PhAT) model is applied for explication of temperature-dependent I-V characteristics measured by other investigators for BiFeO 3 films. Our proposed model describes well not only current dependence on temperature measured in a wide temperature range but also temperature-dep...

Full description

Saved in:
Bibliographic Details
Published in:Ferroelectrics 2010-01, Vol.396 (1), p.60-66
Main Authors: Pipinys, P., Rimeika, A., Lapeika, V.
Format: Article
Language:English
Subjects:
63.20.kd
73.43.Jn
73.50.Fq
77.55.fp
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Dielectric thin films
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Ferroelectric materials
Ferroelectrics
Field strength
I-V characteristics
Leakage current
Mathematical models
phonon-assisted tunneling
Phonons
Physics
Thin films
Tunneling
Tunnelling
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Phonon-assisted tunneling (PhAT) model is applied for explication of temperature-dependent I-V characteristics measured by other investigators for BiFeO 3 films. Our proposed model describes well not only current dependence on temperature measured in a wide temperature range but also temperature-dependent I-V data using the same set of parameters characterizing material under investigation. The values of active phonons energy and field strength for tunneling are estimated from the fit of current dependence on temperature and I-V-T data with the two different phonon-assisted tunnelling theories.
ISSN:0015-0193
1563-5112
DOI:10.1080/00150191003795270