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Analysis of Leakage Current Mechanisms in BiFeO3 Thin Films
Phonon-assisted tunneling (PhAT) model is applied for explication of temperature-dependent I-V characteristics measured by other investigators for BiFeO 3 films. Our proposed model describes well not only current dependence on temperature measured in a wide temperature range but also temperature-dep...
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| Published in: | Ferroelectrics 2010-01, Vol.396 (1), p.60-66 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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| container_end_page | 66 |
| container_issue | 1 |
| container_start_page | 60 |
| container_title | Ferroelectrics |
| container_volume | 396 |
| creator | Pipinys, P. Rimeika, A. Lapeika, V. |
| description | Phonon-assisted tunneling (PhAT) model is applied for explication of temperature-dependent I-V characteristics measured by other investigators for BiFeO
3
films. Our proposed model describes well not only current dependence on temperature measured in a wide temperature range but also temperature-dependent I-V data using the same set of parameters characterizing material under investigation. The values of active phonons energy and field strength for tunneling are estimated from the fit of current dependence on temperature and I-V-T data with the two different phonon-assisted tunnelling theories. |
| doi_str_mv | 10.1080/00150191003795270 |
| format | article |
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films. Our proposed model describes well not only current dependence on temperature measured in a wide temperature range but also temperature-dependent I-V data using the same set of parameters characterizing material under investigation. The values of active phonons energy and field strength for tunneling are estimated from the fit of current dependence on temperature and I-V-T data with the two different phonon-assisted tunnelling theories.</description><identifier>ISSN: 0015-0193</identifier><identifier>EISSN: 1563-5112</identifier><identifier>DOI: 10.1080/00150191003795270</identifier><identifier>CODEN: FEROA8</identifier><language>eng</language><publisher>Colchester: Taylor & Francis Group</publisher><subject>63.20.kd ; 73.43.Jn ; 73.50.Fq ; 77.55.fp ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Dielectric thin films ; Dielectrics, piezoelectrics, and ferroelectrics and their properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport in interface structures ; Exact sciences and technology ; Ferroelectric materials ; Ferroelectrics ; Field strength ; I-V characteristics ; Leakage current ; Mathematical models ; phonon-assisted tunneling ; Phonons ; Physics ; Thin films ; Tunneling ; Tunnelling</subject><ispartof>Ferroelectrics, 2010-01, Vol.396 (1), p.60-66</ispartof><rights>Copyright Taylor & Francis Group, LLC 2010</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4024,27923,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23217937$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Pipinys, P.</creatorcontrib><creatorcontrib>Rimeika, A.</creatorcontrib><creatorcontrib>Lapeika, V.</creatorcontrib><title>Analysis of Leakage Current Mechanisms in BiFeO3 Thin Films</title><title>Ferroelectrics</title><description>Phonon-assisted tunneling (PhAT) model is applied for explication of temperature-dependent I-V characteristics measured by other investigators for BiFeO
3
films. Our proposed model describes well not only current dependence on temperature measured in a wide temperature range but also temperature-dependent I-V data using the same set of parameters characterizing material under investigation. 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3
films. Our proposed model describes well not only current dependence on temperature measured in a wide temperature range but also temperature-dependent I-V data using the same set of parameters characterizing material under investigation. The values of active phonons energy and field strength for tunneling are estimated from the fit of current dependence on temperature and I-V-T data with the two different phonon-assisted tunnelling theories.</abstract><cop>Colchester</cop><pub>Taylor & Francis Group</pub><doi>10.1080/00150191003795270</doi><tpages>7</tpages></addata></record> |
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| source | Taylor and Francis:Jisc Collections:Taylor and Francis Read and Publish Agreement 2024-2025:Science and Technology Collection (Reading list) |
| subjects | 63.20.kd 73.43.Jn 73.50.Fq 77.55.fp Condensed matter: electronic structure, electrical, magnetic, and optical properties Dielectric thin films Dielectrics, piezoelectrics, and ferroelectrics and their properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Ferroelectric materials Ferroelectrics Field strength I-V characteristics Leakage current Mathematical models phonon-assisted tunneling Phonons Physics Thin films Tunneling Tunnelling |
| title | Analysis of Leakage Current Mechanisms in BiFeO3 Thin Films |
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