Electrical TCAD Simulations of a Germanium pMOSFET Technology

A commercial technology computer-aided design device simulator was extended to allow electrical simulations of sub-100-nm germanium pMOSFETs. Parameters for generation/recombination mechanisms (Shockley-Read-Hall, trap-assisted tunneling, and band-to-band tunneling) and mobility models (impurity sca...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2010-10, Vol.57 (10), p.2539-2546
Main Authors: Hellings, Geert, Eneman, Geert, Krom, Raymond, De Jaeger, B, Mitard, Jérôme, De Keersgieter, An, Hoffmann, Thomas, Meuris, Marc, De Meyer, Kristin
Format: Article
Language:English
Subjects:
Applied sciences
Computer aided design
Computer simulation
Devices
Electronics
Energy use
Exact sciences and technology
Gates
Germanium
Halos
Implants
Junctions
Logic gates
Mathematical models
modeling
MOSFET
MOSFET circuits
Scattering
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor process modeling
Silicon
technology computer-aided design (TCAD) simulations
Transistors
Tunneling
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Summary:A commercial technology computer-aided design device simulator was extended to allow electrical simulations of sub-100-nm germanium pMOSFETs. Parameters for generation/recombination mechanisms (Shockley-Read-Hall, trap-assisted tunneling, and band-to-band tunneling) and mobility models (impurity scattering and mobility reduction at high lateral and transversal field) are provided. The simulations were found to correspond well with the experimental I- V data on our Ge transistors at gate lengths down to 70 nm and various bias conditions. The effect of changes in halo dose and extension energies is discussed, illustrating that the set of models presented in this paper can prove useful to optimize and predict the performance of new Ge-based devices.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2010.2060726