Comparative Study of 1/f Noise Degradation Caused by Fowler―Nordheim Tunneling Stress in Silicon Nanowire Transistors and FinFETs

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Bibliographic Details
Published in:IEEE transactions on electron devices 2010-10, Vol.57 (10), p.2774-2779
Main Authors: CHENGQING WEI, XIONG, Yong-Zhong, XING ZHOU, SINGH, Navab, YUAN, Xiao-Jun, GUO QIANG LO, LAP CHAN, KWONG, Dim-Lee
Format: Article
Language:English
Subjects:
Applied sciences
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
Materials science
Nanoscale materials and structures: fabrication and characterization
Physics
Quantum wires
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2010.2061853