Negative differential resistance in doped poly(3-methylthiophene) devices

The current density–voltage ( J – V ) characteristics of poly(3-methylthiophene) devices show a negative differential resistance (NDR) at room temperature with a large peak to valley current ratio (∼507). This NDR can be tuned by two orders of magnitude by controlling the carrier density due to the...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2010-10, Vol.43 (42), p.425103-425103
Main Authors: Anjaneyulu, P, Sangeeth, C S Suchand, Menon, Reghu
Format: Article
Language:English
Subjects:
Carrier density
Carriers
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity of specific materials
Devices
Dielectric breakdown and space-charge effects
Dielectric properties of solids and liquids
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Electronic transport in condensed matter
Exact sciences and technology
Physics
Polymers
organic compounds (including organic semiconductors)
Trapping
Valleys
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Summary:The current density–voltage ( J – V ) characteristics of poly(3-methylthiophene) devices show a negative differential resistance (NDR) at room temperature with a large peak to valley current ratio (∼507). This NDR can be tuned by two orders of magnitude by controlling the carrier density due to the variation of the space-charge region in the device. The temperature and scan rate dependent J – V measurements infer that the NDR is mainly driven by the trapping and de-trapping of carriers. The photo-generation of carriers is observed to reduce the NDR effect.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/43/42/425103