Oriented Growth of Single-Crystal Ni Nanowires onto Amorphous SiO2

Highly oriented, single-crystal Ni nanowire arrays have been synthesized atop amorphous SiO2∥Si substrates using a single-step chemical vapor deposition method in the absence of any foreign catalyst. Electron and X-ray diffraction confirm the crystalline quality of the Ni nanowires while magnetoresi...

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Bibliographic Details
Published in:Nano letters 2010-12, Vol.10 (12), p.5070-5075
Main Authors: Chan, Keith T, Kan, Jimmy J, Doran, Christopher, Ouyang, Lu, Smith, David J, Fullerton, Eric E
Format: Article
Language:English
Subjects:
Catalytic methods
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Methods of nanofabrication
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Physics
Quantum wires
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Summary:Highly oriented, single-crystal Ni nanowire arrays have been synthesized atop amorphous SiO2∥Si substrates using a single-step chemical vapor deposition method in the absence of any foreign catalyst. Electron and X-ray diffraction confirm the crystalline quality of the Ni nanowires while magnetoresistance measurements probe the magnetic response and the behavior is explained using simulation results for nanoscale, single-crystal Ni. A growth mechanism involving competing chemical, energetic, and kinetic influences is presented.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl103301x