Optical characterization of low-temperature-grown GaAs for ultrafast all-optical switching devices

Low-temperature-grown GaAs (LT-GaAs) is a promising material for all-optical switching devices due to its outstanding optical characteristics. In this paper, we outline a simplified model we have developed to describe the dynamics of the carriers in this material. We also report the results of a ser...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 1998-08, Vol.34 (8), p.1426-1437
Main Authors: Loka, H.S., Benjamin, S.D., Smith, P.W.E.
Format: Article
Language:English
Subjects:
Absorption
Annealing
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Gallium arsenide
Nonlinear optics
Optical bistability, multistability and switching, including local field effects
Optical bistability, multistability, and switching
Optical devices
Optical materials
Optical refraction
Optical variables control
Optics
Other nonlinear optical materials
photorefractive and semiconductor materials
Performance evaluation
Physics
Refractive index
Temperature
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Description
Summary:Low-temperature-grown GaAs (LT-GaAs) is a promising material for all-optical switching devices due to its outstanding optical characteristics. In this paper, we outline a simplified model we have developed to describe the dynamics of the carriers in this material. We also report the results of a series of measurements that we have performed to characterize the optical properties of the material. Specifically, we present the first measurements of the two-photon absorption coefficient and the refractive index changes as a function of the growth and annealing temperatures in LT-GaAs. Finally, we show how our model can be used to optimize the material for applications in all-optical switching.
ISSN:0018-9197
1558-1713
DOI:10.1109/3.704335