The Hysteretic Ferroelectric Tunnel FET

We present the fabrication and the electrical characterization of ferroelectric tunnel FETs (Fe-TFETs). This novel family of hysteretic switches combines the low subthreshold power of band-to-band tunneling devices with the retention characteristics of Fe gate stacks, offering some interesting featu...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2010-12, Vol.57 (12), p.3518-3524
Main Authors: Ionescu, A M, Lattanzio, L, Salvatore, G A, De Michielis, L, Boucart, K, Bouvet, D
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Devices
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Ferroelectric devices
Ferroelectric FET
Ferroelectric materials
Ferroelectricity
FETs
Gates
Hysteresis
Iron
Magnetic and optical mass memories
memory
Molecular electronics, nanoelectronics
MOSFET circuits
nanoelectronic switch
Nanoelectronics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Stacks
Storage and reproduction of information
Studies
Switching, multiplexing, switched capacity circuits
Temperature measurement
Transistors
tunnel FET
Tunneling
Tunnels (transportation)
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Summary:We present the fabrication and the electrical characterization of ferroelectric tunnel FETs (Fe-TFETs). This novel family of hysteretic switches combines the low subthreshold power of band-to-band tunneling devices with the retention characteristics of Fe gate stacks, offering some interesting features for future one-transistor (1T) memory cells. We report I on /I off larger than 10 5 and I off on the order of 100 fA/μm in micrometer-scale p-type Fe-TFETs fabricated on ultrathin-film (fully depleted) silicon-on-insulator substrates with a SiO 2 /Al 2 O 3 / PVDF gate stack processed at low temperature. The hysteretic characteristics of the TFETs with Fe gate stacks are revealed by static experiments, and the principle of the proposed device is further confirmed by 2-D calibrated numerical simulations. Low temperature measurements down to 77 K confirm the reduced sensitivity of the TFET subthreshold swing to temperature and distinguish them from fabricated reference Fe metal-oxide-semiconductor FETs. Finally, we investigate the potential of Fe-TFETs as 1T memory devices and find retention times on the order of a few minutes at room temperature.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2010.2079531