Turn-Around Effect of Vth Shift During the Positive Bias Temperature Instability of the n-Type Transistor With HfOxNy Gate Dielectrics

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Bibliographic Details
Published in:IEEE electron device letters 2010-12, Vol.31 (12), p.1479-1481
Main Authors: JUNG, Hyung-Suk, RHA, Sang-Ho, SONG, Min-Woo, LEE, Nae-In, HYO KYEOM KIM, JEONG HWAN KIM, WON, Seok-Jun, LEE, Joohwi, SANG YOUNG LEE, CHEOL SEONG HWANG, PARK, Jung-Min, KIM, Weon-Hong
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2010.2078792