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Analysis of Si/Si1-xGex retrograded double quantum well p-type MOSFET

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Published in:Semiconductor science and technology 1998-09, Vol.13 (9), p.999-1005
Main Authors: CHRETIEN, O, YOUSIF, M. Y. A, NUR, O, PATEL, C. J, WILLANDER, M
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container_end_page 1005
container_issue 9
container_start_page 999
container_title Semiconductor science and technology
container_volume 13
creator CHRETIEN, O
YOUSIF, M. Y. A
NUR, O
PATEL, C. J
WILLANDER, M
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doi_str_mv 10.1088/0268-1242/13/9/006
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ispartof Semiconductor science and technology, 1998-09, Vol.13 (9), p.999-1005
issn 0268-1242
1361-6641
language eng
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source Institute of Physics:Jisc Collections:IOP Publishing Journal Archive 1874-1998 (access period 2020 to 2024); Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title Analysis of Si/Si1-xGex retrograded double quantum well p-type MOSFET
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