InAlAs Avalanche Photodiode With Type-II Superlattice Absorber for Detection Beyond 2 μm

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Bibliographic Details
Published in:IEEE transactions on electron devices 2011-02, Vol.58 (2), p.486-489
Main Authors: ONG, Daniel S. G, JO SHIEN NG, YU LING GOH, CHEE HING TAN, SHIYONG ZHANG, DAVID, John P. R
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
Materials science
Nanoscale materials and structures: fabrication and characterization
Optoelectronic devices
Physics
Quantum wells
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online Access:Get full text
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Summary:
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2010.2090352