Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs

We have carried out 2-D simulation of N-polar and Ga-polar AlGaN/GaN HEMTs to investigate short-channel effects in highly scaled devices. N-polar HEMTs were found to have better drain-induced barrier lowering (DIBL) suppression than Ga-polar HEMTs. The short-channel effects were found to originate f...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2011-03, Vol.58 (3), p.704-708
Main Authors: Pil Sung Park, Rajan, S
Format: Article
Language:English
Subjects:
AlGaN/GaN high electron mobility transistor (HEMT)
Aluminum gallium nitride
Aluminum gallium nitrides
Applied sciences
Buffers
Channels
Devices
drain-induced barrier lowering (DIBL)
Electronics
Exact sciences and technology
Ga-polar
Gallium nitride
Gallium nitrides
HEMTs
High electron mobility transistors
Logic gates
MODFETs
N-polar
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
short-channel effects
Simulation
technology computer-aided design (TCAD)
Threshold voltage
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have carried out 2-D simulation of N-polar and Ga-polar AlGaN/GaN HEMTs to investigate short-channel effects in highly scaled devices. N-polar HEMTs were found to have better drain-induced barrier lowering (DIBL) suppression than Ga-polar HEMTs. The short-channel effects were found to originate from the 2-D potential distribution in the channel and space-charge-limited current through the buffer. The inverted structure of the N-polar HEMT was found to provide better suppression of short-channel effects under idealized theoretical assumptions that were used in the model presented.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2010.2099121