Loading…
Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs
We have carried out 2-D simulation of N-polar and Ga-polar AlGaN/GaN HEMTs to investigate short-channel effects in highly scaled devices. N-polar HEMTs were found to have better drain-induced barrier lowering (DIBL) suppression than Ga-polar HEMTs. The short-channel effects were found to originate f...
Saved in:
| Published in: | IEEE transactions on electron devices 2011-03, Vol.58 (3), p.704-708 |
|---|---|
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Citations: | Items that this one cites Items that cite this one |
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| cited_by | cdi_FETCH-LOGICAL-c465t-5114f2cfc3f9ab35d64592ab13fbf8d663f710c5b4a88d30cd96ec829cd4002e3 |
|---|---|
| cites | cdi_FETCH-LOGICAL-c465t-5114f2cfc3f9ab35d64592ab13fbf8d663f710c5b4a88d30cd96ec829cd4002e3 |
| container_end_page | 708 |
| container_issue | 3 |
| container_start_page | 704 |
| container_title | IEEE transactions on electron devices |
| container_volume | 58 |
| creator | Pil Sung Park Rajan, S |
| description | We have carried out 2-D simulation of N-polar and Ga-polar AlGaN/GaN HEMTs to investigate short-channel effects in highly scaled devices. N-polar HEMTs were found to have better drain-induced barrier lowering (DIBL) suppression than Ga-polar HEMTs. The short-channel effects were found to originate from the 2-D potential distribution in the channel and space-charge-limited current through the buffer. The inverted structure of the N-polar HEMT was found to provide better suppression of short-channel effects under idealized theoretical assumptions that were used in the model presented. |
| doi_str_mv | 10.1109/TED.2010.2099121 |
| format | article |
| fullrecord | <record><control><sourceid>proquest_pasca</sourceid><recordid>TN_cdi_pascalfrancis_primary_23938354</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5696749</ieee_id><sourcerecordid>864420987</sourcerecordid><originalsourceid>FETCH-LOGICAL-c465t-5114f2cfc3f9ab35d64592ab13fbf8d663f710c5b4a88d30cd96ec829cd4002e3</originalsourceid><addsrcrecordid>eNpdkE1rAjEQQENpodb2XuglFEpPq_k2OYpdtWBtQXsO2WyCK-uuTdZD_30jiocehmGYN8PMA-ARowHGSA3X-duAoFQRpBQm-Ar0MOejTAkmrkEPISwzRSW9BXcxblMpGCM9MF1Vu0NtuqptYOvhatOGLptsTNO4GubeO9tFWDVwmUHTlHBmsq-2NgGO65lZDlPAef6xjvfgxps6uodz7oPvab6ezLPF5-x9Ml5klgneZRxj5on1lnplCspLwbgipsDUF16WQlA_wsjyghkpS4psqYSzkihbMoSIo33wetq7D-3PwcVO76poXV2bxrWHqOXxK6TkKJHP_8htewhNOk5LTgmXGKsEoRNkQxtjcF7vQ7Uz4VdjpI9addKqj1r1WWsaeTnvNdGa2gfT2Cpe5gg9SuYscU8nrnLOXdpcKDFiiv4BSQR85w</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>853258119</pqid></control><display><type>article</type><title>Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs</title><source>IEEE Xplore (Online service)</source><creator>Pil Sung Park ; Rajan, S</creator><creatorcontrib>Pil Sung Park ; Rajan, S</creatorcontrib><description>We have carried out 2-D simulation of N-polar and Ga-polar AlGaN/GaN HEMTs to investigate short-channel effects in highly scaled devices. N-polar HEMTs were found to have better drain-induced barrier lowering (DIBL) suppression than Ga-polar HEMTs. The short-channel effects were found to originate from the 2-D potential distribution in the channel and space-charge-limited current through the buffer. The inverted structure of the N-polar HEMT was found to provide better suppression of short-channel effects under idealized theoretical assumptions that were used in the model presented.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2010.2099121</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>AlGaN/GaN high electron mobility transistor (HEMT) ; Aluminum gallium nitride ; Aluminum gallium nitrides ; Applied sciences ; Buffers ; Channels ; Devices ; drain-induced barrier lowering (DIBL) ; Electronics ; Exact sciences and technology ; Ga-polar ; Gallium nitride ; Gallium nitrides ; HEMTs ; High electron mobility transistors ; Logic gates ; MODFETs ; N-polar ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; short-channel effects ; Simulation ; technology computer-aided design (TCAD) ; Threshold voltage ; Transistors</subject><ispartof>IEEE transactions on electron devices, 2011-03, Vol.58 (3), p.704-708</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Mar 2011</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c465t-5114f2cfc3f9ab35d64592ab13fbf8d663f710c5b4a88d30cd96ec829cd4002e3</citedby><cites>FETCH-LOGICAL-c465t-5114f2cfc3f9ab35d64592ab13fbf8d663f710c5b4a88d30cd96ec829cd4002e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5696749$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23938354$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Pil Sung Park</creatorcontrib><creatorcontrib>Rajan, S</creatorcontrib><title>Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>We have carried out 2-D simulation of N-polar and Ga-polar AlGaN/GaN HEMTs to investigate short-channel effects in highly scaled devices. N-polar HEMTs were found to have better drain-induced barrier lowering (DIBL) suppression than Ga-polar HEMTs. The short-channel effects were found to originate from the 2-D potential distribution in the channel and space-charge-limited current through the buffer. The inverted structure of the N-polar HEMT was found to provide better suppression of short-channel effects under idealized theoretical assumptions that were used in the model presented.</description><subject>AlGaN/GaN high electron mobility transistor (HEMT)</subject><subject>Aluminum gallium nitride</subject><subject>Aluminum gallium nitrides</subject><subject>Applied sciences</subject><subject>Buffers</subject><subject>Channels</subject><subject>Devices</subject><subject>drain-induced barrier lowering (DIBL)</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Ga-polar</subject><subject>Gallium nitride</subject><subject>Gallium nitrides</subject><subject>HEMTs</subject><subject>High electron mobility transistors</subject><subject>Logic gates</subject><subject>MODFETs</subject><subject>N-polar</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>short-channel effects</subject><subject>Simulation</subject><subject>technology computer-aided design (TCAD)</subject><subject>Threshold voltage</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNpdkE1rAjEQQENpodb2XuglFEpPq_k2OYpdtWBtQXsO2WyCK-uuTdZD_30jiocehmGYN8PMA-ARowHGSA3X-duAoFQRpBQm-Ar0MOejTAkmrkEPISwzRSW9BXcxblMpGCM9MF1Vu0NtuqptYOvhatOGLptsTNO4GubeO9tFWDVwmUHTlHBmsq-2NgGO65lZDlPAef6xjvfgxps6uodz7oPvab6ezLPF5-x9Ml5klgneZRxj5on1lnplCspLwbgipsDUF16WQlA_wsjyghkpS4psqYSzkihbMoSIo33wetq7D-3PwcVO76poXV2bxrWHqOXxK6TkKJHP_8htewhNOk5LTgmXGKsEoRNkQxtjcF7vQ7Uz4VdjpI9addKqj1r1WWsaeTnvNdGa2gfT2Cpe5gg9SuYscU8nrnLOXdpcKDFiiv4BSQR85w</recordid><startdate>20110301</startdate><enddate>20110301</enddate><creator>Pil Sung Park</creator><creator>Rajan, S</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QF</scope><scope>7QQ</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope></search><sort><creationdate>20110301</creationdate><title>Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs</title><author>Pil Sung Park ; Rajan, S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c465t-5114f2cfc3f9ab35d64592ab13fbf8d663f710c5b4a88d30cd96ec829cd4002e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>AlGaN/GaN high electron mobility transistor (HEMT)</topic><topic>Aluminum gallium nitride</topic><topic>Aluminum gallium nitrides</topic><topic>Applied sciences</topic><topic>Buffers</topic><topic>Channels</topic><topic>Devices</topic><topic>drain-induced barrier lowering (DIBL)</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Ga-polar</topic><topic>Gallium nitride</topic><topic>Gallium nitrides</topic><topic>HEMTs</topic><topic>High electron mobility transistors</topic><topic>Logic gates</topic><topic>MODFETs</topic><topic>N-polar</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>short-channel effects</topic><topic>Simulation</topic><topic>technology computer-aided design (TCAD)</topic><topic>Threshold voltage</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pil Sung Park</creatorcontrib><creatorcontrib>Rajan, S</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Electronic Library Online</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Pil Sung Park</au><au>Rajan, S</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2011-03-01</date><risdate>2011</risdate><volume>58</volume><issue>3</issue><spage>704</spage><epage>708</epage><pages>704-708</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>We have carried out 2-D simulation of N-polar and Ga-polar AlGaN/GaN HEMTs to investigate short-channel effects in highly scaled devices. N-polar HEMTs were found to have better drain-induced barrier lowering (DIBL) suppression than Ga-polar HEMTs. The short-channel effects were found to originate from the 2-D potential distribution in the channel and space-charge-limited current through the buffer. The inverted structure of the N-polar HEMT was found to provide better suppression of short-channel effects under idealized theoretical assumptions that were used in the model presented.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2010.2099121</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2011-03, Vol.58 (3), p.704-708 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_23938354 |
| source | IEEE Xplore (Online service) |
| subjects | AlGaN/GaN high electron mobility transistor (HEMT) Aluminum gallium nitride Aluminum gallium nitrides Applied sciences Buffers Channels Devices drain-induced barrier lowering (DIBL) Electronics Exact sciences and technology Ga-polar Gallium nitride Gallium nitrides HEMTs High electron mobility transistors Logic gates MODFETs N-polar Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices short-channel effects Simulation technology computer-aided design (TCAD) Threshold voltage Transistors |
| title | Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T07%3A59%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pasca&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Simulation%20of%20Short-Channel%20Effects%20in%20N-%20and%20Ga-Polar%20AlGaN/GaN%20HEMTs&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Pil%20Sung%20Park&rft.date=2011-03-01&rft.volume=58&rft.issue=3&rft.spage=704&rft.epage=708&rft.pages=704-708&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2010.2099121&rft_dat=%3Cproquest_pasca%3E864420987%3C/proquest_pasca%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c465t-5114f2cfc3f9ab35d64592ab13fbf8d663f710c5b4a88d30cd96ec829cd4002e3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=853258119&rft_id=info:pmid/&rft_ieee_id=5696749&rfr_iscdi=true |