A study of the switching mechanism and electrode material of fully CMOS compatible tungsten oxide ReRAM: Memristive and Resistive Devices and Systems

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2011, Vol.102 (4), p.901-907
Main Authors: CHIEN, W. C, CHEN, Y. C, LEE, M. H, SHIH, Y. H, HSIEH, K. Y, LU, Chih-Yuan, LAI, E. K, LEE, F. M, LIN, Y. Y, CHUANG, Alfred T. H, CHANG, K. P, YAO, Y. D, CHOU, T. H, LIN, H. M
Format: Article
Language:English
Subjects:
Applied sciences
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Materials
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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ISSN:0947-8396
1432-0630