Polymeric ferroelectric and oxide semiconductor-based fully transparent memristor cell: Memristive and Resistive Devices and Systems

Saved in:
Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2011, Vol.102 (4), p.983-990
Main Authors: YOON, Sung-Min, YANG, Shinhyuk, KANG, Seung-Youl, RYU, Ho-Jun, YU, Byoung-Gon, JUNG, Soon-Won, BYUN, Chun-Won, RYU, Min-Ki, CHEONG, Woo-Seok, KIM, Byeonghoon, OH, Himchan, PARK, Sang-Hee Ko, HWANG, Chi-Sun
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Dielectric, piezoelectric, ferroelectric and antiferroelectric materials
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Electronics
Exact sciences and technology
Materials
Molecular electronics, nanoelectronics
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:0947-8396
1432-0630