Light emitting diodes as a monitor to study p-type doping of GaN-based heterostructures grown by MOVPE

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Main Authors: SCHINELLER, B, GUTTZEIT, A, VERTOMMEN, F, SCHÖN, O, HEUKEN, M, HEIME, K, BECCARD, R
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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container_issue
container_start_page 798
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container_volume 189-90
creator SCHINELLER, B
GUTTZEIT, A
VERTOMMEN, F
SCHÖN, O
HEUKEN, M
HEIME, K
BECCARD, R
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format conference_proceeding
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identifier ISSN: 0022-0248
ispartof Journal of crystal growth, 1998, Vol.189-90, p.798-802
issn 0022-0248
1873-5002
language eng
recordid cdi_pascalfrancis_primary_2406299
source Elsevier
subjects Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Light emitting diodes as a monitor to study p-type doping of GaN-based heterostructures grown by MOVPE
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