Growth of dilute nitrides and 1.3 μm edge emitting lasers on GaAs by MBE : Novel Gain Materials Based on III-V-N Compounds

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Bibliographic Details
Published in:Physica status solidi. B. Basic research 2011, Vol.248 (5), p.1207-1211
Main Authors: WANG, S. M, ADOLFSSON, G, ZHAO, H, SONG, Y. X, SADEGHI, M, GUSTAVSSON, J, MODH, P, HAGLUND, A, WESTBERGH, P, LARSSON, A
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
Online Access:Get full text
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ISSN:0370-1972
1521-3951