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Plasma production of nanodevice-grade semiconductor nanocrystals
Semiconductor nanocrystals (NCs) offer new opportunities for optical and electronic devices ranging from single-electron transistors to large-area solar cells. Solution synthesis methods cannot reach the temperatures necessary to produce crystalline nanoparticles of covalently bonded materials, and...
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Published in: | Journal of physics. D, Applied physics Applied physics, 2011-05, Vol.44 (17), p.174009 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Semiconductor nanocrystals (NCs) offer new opportunities for optical and electronic devices ranging from single-electron transistors to large-area solar cells. Solution synthesis methods cannot reach the temperatures necessary to produce crystalline nanoparticles of covalently bonded materials, and most gas-phase techniques suffer from particle agglomeration and sintering. Nonthermal plasma synthesis, however, can produce high-quality NCs of key materials such as Si and Ge. In this review, we examine the current state and future challenges of the growing field of plasma-synthesized NCs from a device applications perspective. We identify NC microstructure, morphology, ensemble monodispersity, surface chemistry and doping as being vital to the success of next-generation devices, and we discuss research opportunities to understand and control these properties during plasma synthesis. |
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ISSN: | 0022-3727 1361-6463 |
DOI: | 10.1088/0022-3727/44/17/174009 |