Ge1―xSnx stressors for strained-Ge CMOS

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Bibliographic Details
Published in:Solid-state electronics 2011-06, Vol.60 (1), p.53-57
Main Authors: TAKEUCHI, S, SHIMURA, Y, LOO, R, SAKAI, A, NAKATSUKA, O, ZAIMA, S, NISHIMURA, T, VINCENT, B, ENEMAN, G, CLARYSSE, T, DEMEULEMEESTER, J, VANTOMME, A, DEKOSTER, J, CAYMAX, M
Format: Article
Language:English
Subjects:
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2011.01.022