Ge1―xSnx stressors for strained-Ge CMOS

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Published in:Solid-state electronics 2011-06, Vol.60 (1), p.53-57
Main Authors: TAKEUCHI, S, SHIMURA, Y, LOO, R, SAKAI, A, NAKATSUKA, O, ZAIMA, S, NISHIMURA, T, VINCENT, B, ENEMAN, G, CLARYSSE, T, DEMEULEMEESTER, J, VANTOMME, A, DEKOSTER, J, CAYMAX, M
Format: Article
Language:English
Subjects:
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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container_end_page 57
container_issue 1
container_start_page 53
container_title Solid-state electronics
container_volume 60
creator TAKEUCHI, S
SHIMURA, Y
LOO, R
SAKAI, A
NAKATSUKA, O
ZAIMA, S
NISHIMURA, T
VINCENT, B
ENEMAN, G
CLARYSSE, T
DEMEULEMEESTER, J
VANTOMME, A
DEKOSTER, J
CAYMAX, M
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doi_str_mv 10.1016/j.sse.2011.01.022
format article
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source ScienceDirect Freedom Collection 2022-2024
subjects Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title Ge1―xSnx stressors for strained-Ge CMOS
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