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Aluminum Alloying in Local Contact Areas on Dielectrically Passivated Rear Surfaces of Silicon Solar Cells
We present a detailed study on the rear contact formation of rear-surface-passivated silicon solar cells by full-area screen printing and alloying of aluminum pastes on the locally opened passivation layer. We demonstrate that applying conventional Al pastes exhibits two main problems: (1) high cont...
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Published in: | IEEE electron device letters 2011-07, Vol.32 (7), p.916-918 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We present a detailed study on the rear contact formation of rear-surface-passivated silicon solar cells by full-area screen printing and alloying of aluminum pastes on the locally opened passivation layer. We demonstrate that applying conventional Al pastes exhibits two main problems: (1) high contact depths leading to an enlargement of the contact area and (2) low thicknesses of the Al-doped p + Si regions in the contact points resulting in poor electron shielding. We show that this inadequate contact formation can be directly linked to the deficiently low percentage of silicon that dissolves into the Al-Si melt during alloying. Thus, by intentionally adding silicon to the Al paste, we could significantly improve the contact geometry by reducing the contact depth and enlarging the Al-p + thickness in the contact points, enabling a simple industrially feasible way for the rear contact formation of silicon solar cells. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2011.2143385 |