Impact of Ge Content and Recess Depth on the Leakage Current in Strained Si1―xGex/Si Heterojunctions

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Bibliographic Details
Published in:IEEE transactions on electron devices 2011-08, Vol.58 (8), p.2362-2370
Main Authors: LUQUE RODRIGUEZ, Abraham, BARGALLO GONZALEZ, Mireia, ENEMAN, Geert, CLAEYS, Cor, KOBAYASHI, Daisuke, SIMOEN, Eddy, JIMENEZ TEJADA, Juan A
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online Access:Get full text
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ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2011.2148723