Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With fT of 260 GHz

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Bibliographic Details
Published in:IEEE electron device letters 2011-08, Vol.32 (8), p.1074-1076
Main Authors: SHINOHARA, K, REGAN, D, OHOKA, A, ASBECK, P. M, MICOVIC, M, MILOSAVLJEVIC, I, CORRION, A. L, BROWN, D. F, WILLADSEN, P. J, BUTLER, C, SCHMITZ, A, KIM, S, LEE, V
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2158386