The Effect of Active-Layer Thickness and Back-Channel Conductivity on the Subthreshold Transfer Characteristics of Hf-In-Zn-O TFTs

The effect of active-layer thickness and back-channel conductivity on the subthreshold transfer characteristics of hafnium-indium-zinc-oxide (HIZO) thin-film transistors was studied. Experiments show that subthreshold humps in the transfer curves become more pronounced as the active-layer thickness...

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Bibliographic Details
Published in:IEEE electron device letters 2011-08, Vol.32 (8), p.1077-1079
Main Authors: Maeng, W. J., Joon Seok Park, Hyun-Suk Kim, Eok Soo Kim, Kyoung Seok Son, Tae Sang Kim, Myungkwan Ryu, Sangyoon Lee
Format: Article
Language:English
Subjects:
Active-layer thickness
Applied sciences
back channel
Channels
Conductivity
Devices
Electronics
Exact sciences and technology
Gates
Hafnium
hump
Logic gates
Mathematical analysis
Pixel
Plasmas
Screening
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Thin film transistors
thin-film transistors (TFTs)
Threshold voltage
Transistors
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Summary:The effect of active-layer thickness and back-channel conductivity on the subthreshold transfer characteristics of hafnium-indium-zinc-oxide (HIZO) thin-film transistors was studied. Experiments show that subthreshold humps in the transfer curves become more pronounced as the active-layer thickness increases, in the presence of a highly conductive back channel. With a highly conductive thin back channel, subthreshold humps were observed as the total active-layer thickness exceeded 80 nm. The above results can be interpreted as a consequence of a reduction in the effective gate field as the active thickness exceeds the "screening length". The screening length of the HIZO layer is calculated to be approximately 78 nm, and accordingly, as the active thickness exceeds this value, subthreshold humps that are anticipated to originate from the back-channel conduction appear.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2156756