Effects of high-pressure H2O-annealing on amorphous IGZO thin-film transistors

The effects of high‐pressure annealing were investigated using amorphous InGaZnO (a‐IGZO) thin‐film transistors (TFTs). The fabricated device annealed at 5 atm in H2O ambient showed the best electrical characteristics and stability under positive bias temperature stress (PBTS). This was attributed t...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2011-09, Vol.208 (9), p.2231-2234
Main Authors: Shin, Hyun Soo, Rim, You Seung, Mo, Yeon-Gon, Choi, Chaun Gi, Kim, Hyun Jae
Format: Article
Language:English
Subjects:
amorphous InGaZnO
annealing
Applied sciences
Electronics
Exact sciences and technology
Materials
positive bias temperature stress
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
thin film transistors
Transistors
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Summary:The effects of high‐pressure annealing were investigated using amorphous InGaZnO (a‐IGZO) thin‐film transistors (TFTs). The fabricated device annealed at 5 atm in H2O ambient showed the best electrical characteristics and stability under positive bias temperature stress (PBTS). This was attributed to mainly a reduction in the band bending at the overlap between the source–drain (S/D) electrodes and the etch stop layer (ESL). This is originated from the recovery of charge‐trapping sites at in‐ and bottom‐ESLs due to defect passivation with the aid of high‐pressure thermal annealing at 5 atm in H2O ambient.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201127243