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Solution-Processed Memristive Junctions Used in a Threshold Indicator
Inkjet-patterned memristive metal/oxide/metal structures were characterized to infer ionic and electronic transport parameters such as mobility and ion distribution. The conductance change with respect to voltage and time was measured for an individual crossbar junction and for junctions that are co...
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| Published in: | IEEE transactions on electron devices 2011-10, Vol.58 (10), p.3435-3443 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c352t-730ada9f40f37936f2fcca85807411e89f6c046eaafc1e2a609025fb1aea4cd23 |
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| cites | cdi_FETCH-LOGICAL-c352t-730ada9f40f37936f2fcca85807411e89f6c046eaafc1e2a609025fb1aea4cd23 |
| container_end_page | 3443 |
| container_issue | 10 |
| container_start_page | 3435 |
| container_title | IEEE transactions on electron devices |
| container_volume | 58 |
| creator | Tse Nga Ng Russo, B. Arias, A. C. |
| description | Inkjet-patterned memristive metal/oxide/metal structures were characterized to infer ionic and electronic transport parameters such as mobility and ion distribution. The conductance change with respect to voltage and time was measured for an individual crossbar junction and for junctions that are connected in series. It was found that continuous dopant redistribution during voltage scans led to a peak in conductance. The mutable conductance of memristive devices was utilized to demonstrate a threshold indicator, in which the crossbar junctions were connected with a piezo sensor input and an electrophoretic display output. The memristive circuit would switch the color of display pixels, depending on the number of input pulses sensed by the piezo. The threshold indicator demonstrates that memristive junctions can be used as integral control switches. It is composed of passive circuit components and does not require an external battery. |
| doi_str_mv | 10.1109/TED.2011.2162334 |
| format | article |
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C.</creator><creatorcontrib>Tse Nga Ng ; Russo, B. ; Arias, A. C.</creatorcontrib><description>Inkjet-patterned memristive metal/oxide/metal structures were characterized to infer ionic and electronic transport parameters such as mobility and ion distribution. The conductance change with respect to voltage and time was measured for an individual crossbar junction and for junctions that are connected in series. It was found that continuous dopant redistribution during voltage scans led to a peak in conductance. The mutable conductance of memristive devices was utilized to demonstrate a threshold indicator, in which the crossbar junctions were connected with a piezo sensor input and an electrophoretic display output. The memristive circuit would switch the color of display pixels, depending on the number of input pulses sensed by the piezo. The threshold indicator demonstrates that memristive junctions can be used as integral control switches. It is composed of passive circuit components and does not require an external battery.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2011.2162334</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Circuits ; Compound structure devices ; Conductance ; Current measurement ; Design. Technologies. Operation analysis. Testing ; Devices ; Display ; Electric potential ; Electrodes ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Exact sciences and technology ; Indicators ; Integrated circuits ; Junctions ; Memristive device ; printed electronics ; resistive switch ; Semiconductor electronics. Microelectronics. Optoelectronics. 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(IEEE) Oct 2011</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c352t-730ada9f40f37936f2fcca85807411e89f6c046eaafc1e2a609025fb1aea4cd23</citedby><cites>FETCH-LOGICAL-c352t-730ada9f40f37936f2fcca85807411e89f6c046eaafc1e2a609025fb1aea4cd23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5991940$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24707965$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Tse Nga Ng</creatorcontrib><creatorcontrib>Russo, B.</creatorcontrib><creatorcontrib>Arias, A. C.</creatorcontrib><title>Solution-Processed Memristive Junctions Used in a Threshold Indicator</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>Inkjet-patterned memristive metal/oxide/metal structures were characterized to infer ionic and electronic transport parameters such as mobility and ion distribution. The conductance change with respect to voltage and time was measured for an individual crossbar junction and for junctions that are connected in series. It was found that continuous dopant redistribution during voltage scans led to a peak in conductance. The mutable conductance of memristive devices was utilized to demonstrate a threshold indicator, in which the crossbar junctions were connected with a piezo sensor input and an electrophoretic display output. The memristive circuit would switch the color of display pixels, depending on the number of input pulses sensed by the piezo. The threshold indicator demonstrates that memristive junctions can be used as integral control switches. It is composed of passive circuit components and does not require an external battery.</description><subject>Applied sciences</subject><subject>Circuits</subject><subject>Compound structure devices</subject><subject>Conductance</subject><subject>Current measurement</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Devices</subject><subject>Display</subject><subject>Electric potential</subject><subject>Electrodes</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Indicators</subject><subject>Integrated circuits</subject><subject>Junctions</subject><subject>Memristive device</subject><subject>printed electronics</subject><subject>resistive switch</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>solgel titanium dioxide</subject><subject>Switches</subject><subject>Thresholds</subject><subject>Time measurement</subject><subject>Titanium</subject><subject>Voltage</subject><subject>Voltage measurement</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNpdkM1LAzEQxYMoWKt3wcsiiKet-d7NUbRqpaJgew4xO6Ep201NdgX_e3dp6cHTMLzfm3k8hC4JnhCC1d1i-jihmJAJJZIyxo_QiAhR5EpyeYxGGJMyV6xkp-gspXW_Ss7pCE0_Q921PjT5RwwWUoIqe4NN9Kn1P5C9do0d1JQtB8U3mckWqwhpFeoqmzWVt6YN8RydOFMnuNjPMVo-TRcPL_n8_Xn2cD_PLRO0zQuGTWWU49ixQjHpqLPWlKLEBScESuWkxVyCMc4SoEZihalwX8SA4baibIxud3e3MXx3kFq98clCXZsGQpe0opJRTKnoyet_5Dp0senD6VKxPo0QpIfwDrIxpBTB6W30GxN_NcF6aFX3reqhVb1vtbfc7O-aZE3tommsTwcf5QUulBz-X-04DwAHWShFFMfsD1PEf2E</recordid><startdate>20111001</startdate><enddate>20111001</enddate><creator>Tse Nga Ng</creator><creator>Russo, B.</creator><creator>Arias, A. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>solgel titanium dioxide</topic><topic>Switches</topic><topic>Thresholds</topic><topic>Time measurement</topic><topic>Titanium</topic><topic>Voltage</topic><topic>Voltage measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tse Nga Ng</creatorcontrib><creatorcontrib>Russo, B.</creatorcontrib><creatorcontrib>Arias, A. 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C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Solution-Processed Memristive Junctions Used in a Threshold Indicator</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2011-10-01</date><risdate>2011</risdate><volume>58</volume><issue>10</issue><spage>3435</spage><epage>3443</epage><pages>3435-3443</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Inkjet-patterned memristive metal/oxide/metal structures were characterized to infer ionic and electronic transport parameters such as mobility and ion distribution. The conductance change with respect to voltage and time was measured for an individual crossbar junction and for junctions that are connected in series. It was found that continuous dopant redistribution during voltage scans led to a peak in conductance. The mutable conductance of memristive devices was utilized to demonstrate a threshold indicator, in which the crossbar junctions were connected with a piezo sensor input and an electrophoretic display output. The memristive circuit would switch the color of display pixels, depending on the number of input pulses sensed by the piezo. The threshold indicator demonstrates that memristive junctions can be used as integral control switches. It is composed of passive circuit components and does not require an external battery.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2011.2162334</doi><tpages>9</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2011-10, Vol.58 (10), p.3435-3443 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_24707965 |
| source | IEEE Electronic Library (IEL) Journals |
| subjects | Applied sciences Circuits Compound structure devices Conductance Current measurement Design. Technologies. Operation analysis. Testing Devices Display Electric potential Electrodes Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Indicators Integrated circuits Junctions Memristive device printed electronics resistive switch Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices solgel titanium dioxide Switches Thresholds Time measurement Titanium Voltage Voltage measurement |
| title | Solution-Processed Memristive Junctions Used in a Threshold Indicator |
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