Effect of Ge2Sb2Te5 Thermal Barrier on Reset Operations in Filament-Type Resistive Memory

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Bibliographic Details
Published in:IEEE electron device letters 2011-11, Vol.32 (11), p.1573-1575
Main Authors: LEE, Wootae, SIDDIK, Manzar, JUNG, Seungjae, PARK, Jubong, KIM, Seonghyun, SHIN, Jungho, LEE, Joonmyoung, PARK, Sangsu, SON, Myungwoo, HWANG, Hyunsang
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online Access:Get full text
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2163614