Robust High-Resistance State and Improved Endurance of HfOX Resistive Memory by Suppression of Current Overshoot

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Bibliographic Details
Published in:IEEE electron device letters 2011-11, Vol.32 (11), p.1585-1587
Main Authors: CHEN, Yu-Sheng, LEE, Heng-Yuan, TSAI, Ming-Jinn, LIEN, Chenhsin, CHEN, Pang-Shiu, LIU, Wen-Hsing, WANG, Sum-Min, GU, Pei-Yi, HSU, Yen-Ya, TSAI, Chen-Han, CHEN, Wei-Su, CHEN, Frederick
Format: Article
Language:English
Subjects:
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2166051