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Pressure and Temperature Dependences of the Electronic Structure of CeIrSi3 Probed by Resonant X-ray Emission Spectroscopy
Pressure and temperature dependences of the electronic structure of the heavy-fermion superconductor CeIrSi 3 have been investigated using partial fluorescence yield x-ray absorption spectroscopy and resonant x-ray emission spectroscopy at the Ce $L_{3}$ edge. Ce is in a weakly mixed valence state a...
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Published in: | Journal of the Physical Society of Japan 2011-12, Vol.80 (12), p.124701-124701-7 |
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Main Authors: | , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
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Summary: | Pressure and temperature dependences of the electronic structure of the heavy-fermion superconductor CeIrSi 3 have been investigated using partial fluorescence yield x-ray absorption spectroscopy and resonant x-ray emission spectroscopy at the Ce $L_{3}$ edge. Ce is in a weakly mixed valence state at ambient pressure, mostly $f^{1}$ with a small contribution from the $f^{0}$ component. Pressure-induced increase of the Ce valence becomes apparent above 4 GPa, concomitantly with the disappearance of the superconductivity. No temperature dependence of the Ce valence is observed within the measured temperature range down to 24 K. |
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ISSN: | 0031-9015 1347-4073 |
DOI: | 10.1143/JPSJ.80.124701 |