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Pressure and Temperature Dependences of the Electronic Structure of CeIrSi3 Probed by Resonant X-ray Emission Spectroscopy

Pressure and temperature dependences of the electronic structure of the heavy-fermion superconductor CeIrSi 3 have been investigated using partial fluorescence yield x-ray absorption spectroscopy and resonant x-ray emission spectroscopy at the Ce $L_{3}$ edge. Ce is in a weakly mixed valence state a...

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Bibliographic Details
Published in:Journal of the Physical Society of Japan 2011-12, Vol.80 (12), p.124701-124701-7
Main Authors: Yamaoka, Hitoshi, Jarrige, Ignace, Tsujii, Naohito, Kotani, Akio, Lin, Jung-Fu, Honda, Fuminori, Settai, Rikio, Ōnuki, Yoshichika, Hiraoka, Nozumu, Ishii, Hirofumi, Tsuei, Ku-Ding
Format: Article
Language:English
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Summary:Pressure and temperature dependences of the electronic structure of the heavy-fermion superconductor CeIrSi 3 have been investigated using partial fluorescence yield x-ray absorption spectroscopy and resonant x-ray emission spectroscopy at the Ce $L_{3}$ edge. Ce is in a weakly mixed valence state at ambient pressure, mostly $f^{1}$ with a small contribution from the $f^{0}$ component. Pressure-induced increase of the Ce valence becomes apparent above 4 GPa, concomitantly with the disappearance of the superconductivity. No temperature dependence of the Ce valence is observed within the measured temperature range down to 24 K.
ISSN:0031-9015
1347-4073
DOI:10.1143/JPSJ.80.124701